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| 1N5614GP thru 1N5622GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES (R) * Superectifier structure for high reliability application * Cavity-free glass-passivated junction * Low forward voltage drop * nted e Pat * Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 * Low leakage current, IR less than 0.1 A * High forward surge capability * Meets environmental standard MIL-S-19500 DO-204AC (DO-15) * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. 1.0 A 200 V to 1000 V 50 A 0.5 A 1.2 V 175 C MECHANICAL DATA Case: DO-204AC, molded epoxy over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage (1) Maximum RMS voltage Maximum DC blocking voltage (1) SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP VRRM VRMS VDC IF(AV) IFSM TJ, TSTG 200 140 200 400 280 400 600 420 600 1.0 50 - 65 to + 175 800 560 800 1000 700 1000 UNIT V V V A A C Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 55 C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (1) Operating junction and storage temperature range (1) Note: (1) JEDEC registered values Document Number: 88520 Revision: 03-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 1N5614GP thru 1N5622GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Minimum reverse breakdown voltage (1) Maximum instantaneous forward voltage (1) Maximum DC reverse current at rated DC blocking voltage (1) Maximum reverse recovery time (1) Maximum junction capacitance Note: (1) JEDEC registered values TEST CONDITIONS 50 A 1.0 A TA = 25 C TA = 100 C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A at 12 V, 1 MHz SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT VBR VF 220 440 660 1.2 0.5 25 880 1100 V V IR A trr CJ 45 35 2.0 25 20 15 s pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance (1) SYMBOL 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP UNIT RJA 45 C/W Note: (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N 1N5618GP-E3/54 1N5618GP-E3/73 1N5618GPHE3/54 (1) 1N5618GPHE3/73 (1) UNIT WEIGHT (g) 0.425 0.425 0.425 0.425 PREFERRED PACKAGE CODE 54 73 54 73 BASE QUANTITY 4000 2000 4000 2000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging 13" diameter paper tape and reel Ammo pack packaging Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.00 50 Average Forward Rectified Current (A) Peak Forward Surge Current (A) 60 Hz Resistive or Inductive Load 0.75 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 40 30 0.50 20 0.25 0.375" (9.5 mm) Lead Length 0 25 50 75 100 125 150 175 10 0 1 10 100 Ambient Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88520 Revision: 03-Apr-08 1N5614GP thru 1N5622GP Vishay General Semiconductor 10 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 1 TJ = 25 C Junction Capacitance (pF) TJ = 150 C 10 0.1 Pulse Width = 300 s 1 % Duty Cycle 0.01 0.4 1 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 10 Instantaneous Reverse Current (A) TJ = 125 C 1 TJ = 75 C 0.1 TJ = 25 C 0.01 0 20 40 60 80 100 Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Document Number: 88520 Revision: 03-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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